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Abstract This work presents a novel approach to achieve directional and normal thermal emission from epsilon‐near–zero (ENZ) materials. ENZ materials exhibit near–zero permittivity at the ENZ point, resulting in some unique properties compared to conventional optical materials including infinite wavelength, constant phase distribution, and decoupling of spatial and temporal fields inside the ENZ material. These properties are used to engineer the far‐field thermal emission from optical antennas fabricated on ENZ film in the mid‐infrared. By coupling the antenna resonance mode with the Berreman mode of the ENZ material, highly directional and normal emission is demonstrated. This approach could have significant implications for thermal management, energy conversion, and sensing applications. 

Abstract Near-perfect light absorbers (NPLAs), with absorbance,$${{{{{{{\mathcal{A}}}}}}}}$$ $A$, of at least 99%, have a wide range of applications ranging from energy and sensing devices to stealth technologies and secure communications. Previous work on NPLAs has mainly relied upon plasmonic structures or patterned metasurfaces, which require complex nanolithography, limiting their practical applications, particularly for large-area platforms. Here, we use the exceptional band nesting effect in TMDs, combined with a Salisbury screen geometry, to demonstrate NPLAs using only two or three uniform atomic layers of transition metal dichalcogenides (TMDs). The key innovation in our design, verified using theoretical calculations, is to stack monolayer TMDs in such a way as to minimize their interlayer coupling, thus preserving their strong band nesting properties. We experimentally demonstrate two feasible routes to controlling the interlayer coupling: twisted TMD bi-layers and TMD/buffer layer/TMD tri-layer heterostructures. Using these approaches, we demonstrate room-temperature values of$${{{{{{{\mathcal{A}}}}}}}}$$ $A$=95% atλ=2.8 eV with theoretically predicted values as high as 99%. Moreover, the chemical variety of TMDs allows us to design NPLAs covering the entire visible range, paving the way for efficient atomically-thin optoelectronics.